The consequence of lateral composition modulation on the anisotropic emission for transitions to the heavy hole subbands in InGaAs quantum wells

The lateral composition modulation that is present in InGaAs quantum wells (QWs) produces an asymmetry in the plane of the QW with two regions where transition to the heavy hole (HH) can occur. Polarization resolved photoluminescence shows that transitions between the conduction band to HH subbands in both the In-rich and Ga-rich regions produce anisotropic features. Also, changing the relative separation of the light hole and HH subbands has little impact on the separation of the anisotropic features of the photoluminescence curves.