Probing the indium clustering in InGaAs∕GaAs quantum wells by room temperature contactless electroreflectance and photoluminescence spectroscopy

Room temperature contactless electroreflectance (CER) supported by photoluminescence (PL) has been proposed as a fast and nondestructive ex situ technique for testing the effect of atom clustering in quantum wells (QWs). The indium clustering in InGaAs∕GaAs QWs was achieved by increasing the growth temperature. It has been shown that this effect causes significant changes in the spectral response. While the line shape of the GaAs-related CER …