Strain-induced compositional shift in the growth of InAsyP1y onto (100) InP by gas-source molecular beam epitaxy

The growth of InAs y P 1−y onto (100) InP by gas-source molecular beam epitaxy was examined systematically, focusing on control of the resulting As/P incorporation ratio. The group V fluxes were obtained by passing phosphine and arsine through a dual-input low-pressure gas cracker. For a given flow ratio of the source gases, the arsenic fraction y of the resulting InAs y P 1−y films is seen to increase with the film thickness over the first …