Conference
Impurity-free intermixing in compressively strained InGaAsP multiple quantum well structures
Abstract
We report on controlled band gap modification in a compressively strained InGaAsP multi-quantum well-laser structure using different encapsulating layers followed by rapid thermal processing (RTP). The structure used was designed as a 1.55μm laser with an active region consisting of three In0.76Ga0.24As0.85P0.15 quantum wells with In0.76Ga0.24As0.52P0.48 barriers grown by metal organic chemical vapor deposition. The heterostructure is capped …
Authors
Teng JH; Dong JR; Chua SJ; Thompson DA; Robinson BJ; Lee ASW; Hazell J; Sproule I
Volume
4
Pagination
pp. 621-624
Publisher
Elsevier
Publication Date
December 2001
DOI
10.1016/s1369-8001(02)00030-6
Conference proceedings
Materials Science in Semiconductor Processing
Issue
6
ISSN
1369-8001