Journal article
InAs quantum wire induced composition modulation in an In0.53Ga0.37Al0.10As barrier layer grown on an InP substrate
Abstract
Composition modulations are observed by transmission electron microscopy in In0.53Ga0.37Al0.10As barrier layers that overgrow both single- and multilayer InAs quantum wire structures grown on an InP substrate. Indium-rich (gallium-deficient) regions were observed in the region of the barrier layer lying directly above individual quantum wires, while indium-deficient (gallium-rich) regions were detected in the barrier above the gaps between …
Authors
Cui K; Robinson BJ; Thompson DA; Botton GA
Journal
Journal of Applied Physics, Vol. 108, No. 3,
Publisher
AIP Publishing
Publication Date
August 1, 2010
DOI
10.1063/1.3460643
ISSN
0021-8979