Conference
Direct Measurement of the Inter-Diffusion in Quantum Wells Enhanced by Group V Intermixing for in P-Based Structures
Abstract
Group V inter-diffusion in InGaAsP/InP quantum wells (QW) has been studied using analytical electron microscopy in the temperature range of 600–850°C. The structure was grown by metalorganic chemical vapour deposition (MOCVD) and subsequently capped with a 100 nm thick layer of SiO2, Si3N4 or low temperature molecular beam epitaxy (MBE)-grown InP (LT-InP). Diffusion coefficients for the group V species were calculated from the …
Authors
Hulko O; Thompson DA; Simmons JG
Pagination
pp. 78-81
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Publication Date
December 1, 2006
DOI
10.1109/commad.2006.4429884
Name of conference
2006 Conference on Optoelectronic and Microelectronic Materials and Devices