Conference
Photoreflectance study of the interdiffusion effects in the InGaAsP-based quantum well laser structures
Abstract
Photoreflectance spectroscopy has been used to study interdiffusion effects of dielectric-capped, rapid-thermal-annealed InGaAsP-based quantum well laser structures grown by gas source molecular beam epitaxy. Post-growth modification-induced changes of the quantum well shape influence its energy levels. For the processed laser structures a blue shift of ground and excited state transitions has been observed. It has been found that the energy …
Authors
Kudrawiec R; Sęk G; Ryczko K; Rudno-Rudziński W; Misiewicz J; Wojcik J; Robinson BJ; Thompson DA; Mascher P
Volume
17
Pagination
pp. 602-603
Publisher
Elsevier
Publication Date
4 2003
DOI
10.1016/s1386-9477(02)00882-2
Conference proceedings
Physica E Low-dimensional Systems and Nanostructures
ISSN
1386-9477