Effect of layer separation, InAs thickness, and rapid thermal annealing on the optical emission from a multi-layer quantum wire structure

Multi-layer InAs quantum wire stacks with different layer separations (8, 15, and 25 nm) and InAs thicknesses (3, 4, 5, and 7 monolayers [ML]) were grown on and embedded in In0.53Ga0.27Al0.20As barrier/spacer layers lattice-matched to an InP substrate. For the samples with 4 ML of InAs and different layer separations, double peak photoluminescence was observed from quantum wire stacks separated by 8 nm, and with a 15 nm spacer layer a long …