Journal article
Refractive indices of InGaAsP lattice-matched to GaAs at wavelengths relevant to device design
Abstract
The refractive indices of In1−xGaxAsyP1−y grown lattice-matched to GaAs by gas-source molecular-beam epitaxy, have been measured by variable angle spectroscopic ellipsometry. Indices in the transparent regime of these quaternaries, at 980 and 808 nm (relevant to the design of pump sources for erbium-doped fiber amplifiers and Nd:YAG lasers, respectively) and at 850 nm, are presented.
Authors
Wallace SG; Robinson BJ; Mascher P; Haugen HK; Thompson DA; Dalacu D; Martinu L
Journal
Applied Physics Letters, Vol. 76, No. 19, pp. 2791–2793
Publisher
AIP Publishing
Publication Date
May 8, 2000
DOI
10.1063/1.126477
ISSN
0003-6951