Journal article
1.4-μm InGaAsP-InP strained multiple-quantum-well laser for broad-wavelength tunability
Abstract
InGaAsP-InP strained multiple-quantum-well (MQW) lasers for extended wavelength tunability in external cavity operation were designed, fabricated, and tested. The active layer was a strain compensated structure consisting of three 3.2/spl plusmn/0.3 nm and three 6.4/spl plusmn/0.3 nm 1.0% compressive strained wells and five 10.3/spl plusmn/0.3 nm 0.45% tensile strained barrier layers. A 2-μm-wide ridge waveguide laser of length 250 μm, when …
Authors
Zhu X; Cassidy DT; Hamp MJ; Thompson DA; Robinson BJ; Zhao QC; Davies M
Journal
IEEE Photonics Technology Letters, Vol. 9, No. 9, pp. 1202–1204
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Publication Date
September 1, 1997
DOI
10.1109/68.618477
ISSN
1041-1135