Conference
Growth and characterization of GaAsSb metamorphic samples on an InP substrate
Abstract
Buffer layers of GaAs1−xSbx were grown on an InP substrate starting at x=0.49 (lattice matched to InP) and increasing x in steps of 0.03–1.0 (GaSb), followed by a 0.5μm thick GaSb metamorphic layer. A 10nm thick InAs quantum well was grown on top and capped with a 100nm GaSb. All layers were grown using gas source molecular beam epitaxy by reducing the As flux in small steps while keeping the Sb flux fixed. The substrate temperature during …
Authors
Mohammedy FM; Hulko O; Robinson BJ; Thompson DA; Deen MJ; Simmons JG
Volume
24
Pagination
pp. 587-590
Publisher
American Vacuum Society
Publication Date
May 1, 2006
DOI
10.1116/1.2194024
Conference proceedings
Journal of Vacuum Science & Technology A Vacuum Surfaces and Films
Issue
3
ISSN
0734-2101