Conference
Use of a Small Lattice Mis-matched Metamorphic Substrate to Extend the Wavelength Range of a Broadband, Polarization Insensitive Semiconductor Optical Amplifier
Abstract
An InAs0.155P0.845 metamorphic substrate is used to increase the long-wavelength range of tensile strained quantum-wells used in polarization-insensitive semiconductor optical amplifiers. The peak emission of the amplified spontaneous emission occurs on the light-hole sub-band at wavelength longer than 1640 nm. In addition, the metamorphic substrate reduces the degree of lateral composition modulation seen by tensile strained semiconductor …
Authors
Czaban JA; Thompson DA; Robinson BJ; Hul'ko O; Simmons JG
Pagination
pp. 37-40
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Publication Date
January 1, 2004
DOI
10.1109/commad.2004.1577486
Name of conference
Conference on Optoelectronic and Microelectronic Materials and Devices, 2004.