Conference
Quantitative compositional analysis of quantum well intermixing using a low temperature MBE‐grown InP cap layer
Abstract
Quantitative compositional evolution is determined for quantum well intermixing (QWI) between InGaAsP quantum wells (QW) confined by InGaAsP quaternary barriers driven by a low temperature (300 °C) MBE grown phosphorous‐rich InP cap layer (LT‐InP). Presence of the LT‐InP cap layer results in a significant blue‐shift in the QW photoluminescence (PL) peak during post‐growth annealing and in reduction of the PL intensity. Cross‐sectional …
Authors
Hulko O; Thompson DA; Simmons JG
Volume
3
Pagination
pp. 647-650
Publisher
Wiley
Publication Date
3 2006
DOI
10.1002/pssc.200564109
Conference proceedings
physica status solidi (c)
Issue
3
ISSN
1862-6351