Channeling studies of Pb1−xSnxTe/PbSeyTe1−y epitaxial structures

Channeling measurements have been carried out using MeV4He+ ions to study layers of Pb1−xSnxTe on PbSeyTe1−y, and vice versa, made using hot-wall epitaxy. The samples were grown in the temperature range of 220–300°C and consist of an epitaxial layer, 200–1000 Å thick, on the substrate material. The measurements reveal that, for small lattice mismatches (≲ 0.1%), the thicker epitaxial layers contain a high concentration of dislocations. Results …