Conference
Characterization of annealed high-resistivity InP grown by He-plasma-assisted epitaxy
Abstract
In this work we report on the effect of annealing high-resistivity InP grown by gas source molecular beam epitaxy in the presence of an electron cyclotron resonance generated He plasma. Previous work has shown that InP grown using this technique exhibits resistivity greater than 105 Ω cm and Be-doped InGaAsP (lattice matched to InP, band-gap wavelength 1.5 μm) exhibits subpicosecond carrier lifetime. This behavior is due to the presence of …
Authors
Pinkney H; Thompson DA; Robinson BJ; Mascher P; Simpson PJ; Myler U; Kang JU; Frankel MY
Volume
16
Pagination
pp. 772-775
Publisher
American Vacuum Society
Publication Date
March 1, 1998
DOI
10.1116/1.581057
Conference proceedings
Journal of Vacuum Science & Technology A Vacuum Surfaces and Films
Issue
2
ISSN
0734-2101