Growth of novel InP-based materials by He-plasma-assisted epitaxy

In this work, we review the novel growth technique developed at McMaster University involving He-plasma-assisted gas source molecular beam epitaxy (GSMBE) which produces III–V materials with properties useful in specific device applications. Using this technique, InP or InGaAsP (1.55μm) is grown under standard GSMBE conditions (for substrate temperature and source fluxes) except that the surface of the sample is exposed to He plasma particles …