Journal article
Ultrafast carrier dynamics in InGaAsP grown by He-plasma-assisted epitaxy
Abstract
We perform dual-wavelength pump–probe measurements on InGaAsP grown by He-plasma-assisted molecular beam epitaxy with Be doping concentrations ranging from 0 to 6×1018 cm−3. The material response times obtained vary from 1 to >70 ps depending on doping concentration, pump pulse energy, and probe wavelength. A two-trap-level rate equation model is presented to explain the various response times observed, and trap densities of 2.5×1017 and …
Authors
Qian L; Smith PWE; Matin MA; Pinkney H; Robinson BJ; Thompson DA
Journal
Optics Communications, Vol. 185, No. 4-6, pp. 487–492
Publisher
Elsevier
Publication Date
11 2000
DOI
10.1016/s0030-4018(00)01030-0
ISSN
0030-4018