AlxIn1-xAsySb1-y digital alloy nBn photodetectors

The n-barrier-n (nBn) photodetectors, fabricated from $Al_{03}InAsSb/Al_{0.7}InAsSb$ digital alloy exhibiting near-zero valence-band offset, have achieved specific detectivity of $1.7\times 10^{10}$ Jones at room temperature, and dark current density of $3.09\times 10^{-3}$ A/cm2 at bias of $-0.5V$ and RoA of $3724.0\ \Omega cm^{2}$ at 300 K.