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Raman spectroscopy of low-dimensional structures
Journal article

Raman spectroscopy of low-dimensional structures

Abstract

The authors demonstrate two applications of Raman scattering for the characterization of low-dimensional structures: they measure the plasmon properties of a modulation-doped multiple quantum well with multiple subband occupation by Raman scattering and hence determine the electronic subband structure and the subband occupation. Secondly, they report work on the phonon properties of silicon-germanium strained layer superlattices. Using a fully three-dimensional model they calculate the 3D phonon dispersion of confined and extended superlattice phonons and measure the phonon spectra using Raman spectroscopy.

Authors

Fasol G; Richards D; White JD; Ploog K; Gibbings CJ; Tuppen CG

Journal

Semiconductor Science and Technology, Vol. 5, No. 12,

Publisher

IOP Publishing

Publication Date

December 1, 1990

DOI

10.1088/0268-1242/5/12/004

ISSN

0268-1242

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