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2D Indium Oxide at the Epitaxial Graphene/SIC...
Journal article

2D Indium Oxide at the Epitaxial Graphene/SIC Interface: Synthesis, Structure, Properties, and Devices

Abstract

Scaled and high-quality insulators are crucial for fabricating 2D/3D hybrid vertical electronic devices such as metal-oxide-semiconductor (MOS) based Schottky diodes and hot electron transistors, the production of which is constrained by the scarcity of bulk layered wide bandgap semiconductors. In this research, the synthesis of a new 2D insulator, monolayer InO2, which differs in stoichiometry from its bulk form is presented, over a large area …

Authors

Turker F; Xu B; Dong C; Labella M; Nayir N; Sheremetyeva N; Trdinich ZJ; Zhang D; Adabasi G; Pourbahari B

Journal

Advanced Materials, , ,

Publisher

Wiley

Publication Date

November 10, 2025

DOI

10.1002/adma.202516133

ISSN

0935-9648