InGaN‐based LEDs grown by plasma‐assisted MBE on (0001) sapphire with GaN QDs in the nucleation layer

Abstract Blue‐violet LEDs based on InGaN MQWs were grown by RF‐plasma MBE on (0001) sapphire with GaN QDs incorporated in the nucleation layer as a mechanism of dislocation filtering. Devices with dimensions 800 μm x 800 μm were fabricated and evaluated at a bare die configuration by measuring their EL spectra and power output. At low injection current, the EL spectra peak at 440 nm. At high injection current a second peak at 385 nm becomes the …