Growth of III‐nitride quantum dots and their applications to blue‐green LEDs

Abstract In this paper we discuss the growth of InN, GaN and InGaN QDs by MBE on either GaN or AlN templates. InN QDs on GaN templates were found to occur without an InN wetting layer, a result consistent with the large lattice mismatch of 11% between InN and GaN. Self‐assembled GaN QDs were grown on AlN templates, using the modified Stranski‐Krastanov mode of growth. The microstructure and the size distribution of such QDs in a single layer or …