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A 2-D Noise Model for CMOS Single Photon Avalanche...
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A 2-D Noise Model for CMOS Single Photon Avalanche Diodes

Abstract

Recent advances have enabled single-photon avalanche diodes (SPADs) to be fully integrated with CMOS signal conditioning and processing circuits, paving the way for compact and efficient imaging applications. However, a significant challenge remains: the absence of accurate models for optimizing the SPAD design prior to fabrication. In this paper, we present a comprehensive noise model and compare simulation results with experimental measurements. Our findings highlight the effectiveness and the necessity of robust SPAD modeling for design optimization as a critical step before fabrication.

Authors

Qian X; Jiang W; Deen MJ

Volume

00

Pagination

pp. 1-3

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Publication Date

March 12, 2025

DOI

10.1109/edtm61175.2025.11040184

Name of conference

2025 9th IEEE Electron Devices Technology & Manufacturing Conference (EDTM)
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