Bose–Einstein modelling of temperature-dependent phonon-assisted band-to-band radiative recombination in 4H-SiC

Temperature-dependent variation in the intensity of 390 nm phonon-assisted, band-to-band radiative recombination in 4H-SiC is measured from −156 to 86.5 °C. Our data show a consistent rise in electroluminescence intensity with increasing temperature in a SiC p–n junction. Derivation of an appropriate model, based on single, dominant electron–phonon coupling and Bose–Einstein phonon occupancy statistics, is shown to fit well with our …