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Erratum to "The impact of electric field strength...
Journal article

Erratum to "The impact of electric field strength on the accuracy of boron dopant quantification in silicon using atom probe tomography"

Authors

Guerguis B; Cuduvally R; Morris RJH; Arcuri G; Langelier B; Bassim N

Journal

Ultramicroscopy, Vol. 271, ,

Publisher

Elsevier

Publication Date

May 1, 2025

DOI

10.1016/j.ultramic.2025.114115

ISSN

0304-3991

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