Growth mechanisms and morphology of Ar+ laser assisted CBE of GaAs

We present results on the effect of focused argon ion laser radiation on the growth rate and morphology of GaAs grown using CBE at substrate temperatures in the range 375–450°C. Local growth rate can be increased by a factor of up to 20 depending on laser power density and substrate temperature. For substrate temperatures greater than 425°C the results show a strong photothermal contribution to the enhancement. A rippled morphology results at the higher power densities and substrate temperatures greater than 425°C, consistent with thermally induced strain in the laser affected area. The development of the morphology is followed in real time using diffusely scattered light form the argon ion laser