Internal Atomic Distortion and Crystalline Characteristics of Epitaxial SiC Thin Films Studied by Short Wavelength and Synchrotron X-ray Diffraction

As a promising candidate for high-power and high-temperature electronics and optoelectronic devices, epitaxial silicon carbide (SiC) thin films grown on single crystal silicon substrate were examined by short wavelength X-ray diffraction (XRD) to study their atomic distortion and internal layer roughness. Unlike the usual wavelength of 1.54 Å from a copper anode, a 0.71 Å wavelength from a molybdenum target enabled accurate detection of up to …