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Detection of Be dopant pairing in VLS grown GaAs...
Journal article

Detection of Be dopant pairing in VLS grown GaAs nanowires with twinning superlattices

Abstract

Control over the distribution of dopants in nanowires is essential for regulating their electronic properties, but perturbations in nanowire microstructure may affect doping. Conversely, dopants may be used to control nanowire microstructure including the generation of twinning superlattices (TSLs)-periodic arrays of twin planes. Here the spatial distribution of Be dopants in a GaAs nanowire with a TSL is investigated using atom probe …

Authors

Mead C; Huang C; Goktas NI; Fiordaliso EM; LaPierre RR; Lauhon LJ

Journal

Nanotechnology, Vol. 34, No. 38,

Publisher

IOP Publishing

Publication Date

September 17, 2023

DOI

10.1088/1361-6528/acde84

ISSN

0957-4484