A high-speed photodetector based on He-plasma assisted MBE grown InGaAsP

Summary form only given. So far, most metal-semiconductor-metal (MSM) photodetectors operating at 1.3 and 1.55 /spl mu/m have been transit-time limited, requiring submicron interdigital lithography and submicron absorption thicknesses. Devices made from InGaAs have shown bandwidths of 12 GHz in a 100/spl times/100 /spl mu/m/sup 2/ MSM and 18.5 GHz in a smaller area MSM. In this work, we have measured the impulse response and the microwave response of simple MSM photodetectors fabricated on He-MBE grown InGaAsP at 1.55 /spl mu/m and 1.3 /spl mu/m, respectively.