Conference
A high-speed photodetector based on He-plasma assisted MBE grown InGaAsP
Abstract
Summary form only given. So far, most metal-semiconductor-metal (MSM) photodetectors operating at 1.3 and 1.55 /spl mu/m have been transit-time limited, requiring submicron interdigital lithography and submicron absorption thicknesses. Devices made from InGaAs have shown bandwidths of 12 GHz in a 100/spl times/100 /spl mu/m/sup 2/ MSM and 18.5 GHz in a smaller area MSM. In this work, we have measured the impulse response and the microwave …
Authors
Kang JU; Williams K; Frankel MY; Esman RD; Thompson DA; Robinson BJ
Pagination
pp. 124-125
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Publication Date
January 1, 1999
DOI
10.1109/cleo.1999.833973
Name of conference
Technical Digest. Summaries of papers presented at the Conference on Lasers and Electro-Optics. Postconference Edition. CLEO '99. Conference on Lasers and Electro-Optics (IEEE Cat. No.99CH37013)