Conference
Evidence of Quantum Confined Stark Effect Due to Doping Profile in InAsP/InP Quantum Well Structures and its Modification by Ion Bombardment
Abstract
We investigate the effects of the doping profile on the photo-luminescence (PL) and cathodo-luminescence (CL) of InAsP/InP quantum well (QW) structures grown on InP. A strong difference between the PL and CL of undoped and doped samples is observed. This is attributed to the quantum confined Stark effect (QSCE) and to the escape of photo-generated charge carriers out of the QWs by tunneling. These effects were probed by measuring the CL on …
Authors
Landesman J-P; Jiménez J; Levallois C; Pommereau F; Beck A; Torres A-F
Pagination
pp. 1-1
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Publication Date
June 1, 2016
DOI
10.1109/iciprm.2016.7528586
Name of conference
2016 Compound Semiconductor Week (CSW) [Includes 28th International Conference on Indium Phosphide & Related Materials (IPRM) & 43rd International Symposium on Compound Semiconductors (ISCS)