Conference
Composition profiles in inp/inasp quantum well structures under the effect of reactives gases during dry etching processes-luminescence and sims
Abstract
We have investigated the effects of reactive gases used during the deep reactive ion etching process of InP-based photonic structures in an inductively-coupled plasma (ICP) reactor. Samples with a specific structure, including 9 InAsP/InP quantum wells (QW) with graded As/P composition, were designed. Different chlorine-based gas chemistries were tested. Characterization was performed using cathodo-luminescence (CL) and photo-luminescence (PL) …
Authors
Landesman J-P; Jiménez J; Hortelano V; Leger Y; Folliot H; Delhaye T; Torres A; Rhallabi A
Pagination
pp. 1-2
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Publication Date
May 1, 2014
DOI
10.1109/iciprm.2014.6880554
Name of conference
26th International Conference on Indium Phosphide and Related Materials (IPRM)