Conference
Inp Surface Properties Under Icp Plasma Etching Using Mixtures of Chlorides and Hydrides
Abstract
In P wafers after etching in an ICP (Inductively-Coupled Plasma) reactor with different kinds of reactant gases have been carefully studied using surface sensitive techniques, in order to gain insight into the mechanisms that control the process. Two types of reactive gas systems have been investigated, namely Cl2/CH4/Ar mixtures on one side, and CH4/H2on the other. In both cases, the composition (flow rate) of the different components was …
Authors
Liu B; Landesman J-P; Leclercq J-L; Rhallabi A; Avella M; González MA; Jiménez J; Guilet S; Cardinaud C; Pommereau F
Pagination
pp. 278-281
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Publication Date
January 1, 2006
DOI
10.1109/iciprm.2006.1634168
Name of conference
2006 International Conference on Indium Phosphide and Related Materials Conference Proceedings