Preprint
Fine structure of excitons in InAs quantum dots on GaAs(110) planar layers and nanowire facets
Abstract
We investigate the optical properties of InAs quantum dots grown by molecular
beam epitaxy on GaAs(110) using Bi as a surfactant. The quantum dots are
Authors
Corfdir P; Lewis RB; Geelhaar L; Brandt O
Publication date
April 27, 2017
DOI
10.48550/arxiv.1704.08543
Preprint server
arXiv