Preprint
Carrier Recombination in Highly Uniform and Phase-Pure GaAs/(Al,Ga)As Core/Shell Nanowire Arrays on Si(111): Mott Transition and Internal Quantum Efficiency
Abstract
GaAs-based nanowires are among the most promising candidates for realizing a
monolithical integration of III-V optoelectronics on the Si platform. To
Authors
Oliva M; Flissikowski T; Góra M; Lähnemann J; Herranz J; Lewis RB; Marquardt O; Ramsteiner M; Geelhaar L; Brandt O
Publication date
November 30, 2022
DOI
10.48550/arxiv.2211.17167
Preprint server
arXiv