Conference
Defining the performance of SiOx ReRAM by engineering oxide microstructure
Abstract
Filamentary resistance switching, or ReRAM, devices based on oxides suffer from device-do-device and cycle-to-cycle variability of electrical characteristics (electroforming voltages, set and reset voltages, resistance levels and cycling endurance). These are largely materials issues related to the microstructure of the switching oxide. Here we outline strategies to engineer the electrical performance of silicon oxide ReRAM by controlling the …
Authors
Kenyon AJ; Mehonic A; Ng W; Zhao L; Cox H; Buckwell M; Patel K; Knights AP; Mannion DJ; Shluger AL
Volume
00
Pagination
pp. 1-4
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Publication Date
June 10, 2022
DOI
10.1109/mocast54814.2022.9837783
Name of conference
2022 11th International Conference on Modern Circuits and Systems Technologies (MOCAST)