Conference
A new charge pumping method for determining the spatial interface state density distribution in MOSFETs
Abstract
A novel charge pumping technique is proposed for measuring the spatial distribution of interface state density N/sub it/ in MOSFETs. Instead of connecting the source and the drain together as is usually done, different reverse bias voltages are applied to the source and the drain separately. The method makes it possible to measure the distribution of N/sub it/ without making any assumptions about it. With this method, one can determine N/sub …
Authors
Li XM; Deen MJ
Pagination
pp. 85-87
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Publication Date
January 1, 1990
DOI
10.1109/iedm.1990.237220
Name of conference
International Technical Digest on Electron Devices
Conference proceedings
International Electron Devices Meeting 1998 Technical Digest (Cat No98CH36217)
ISSN
0163-1918