Conference
DC and noise characteristics of InP-based avalanche photodiodes for optical communication applications
Abstract
The DC and low frequency noise characteristics of InGaAs/InP planar separate absorption, grading, charge, and multiplication (SAGCM) avalanche photodiode are reported. These devices have DC gains greater than 100 with about 0.3 /spl mu/W input power and breakdown voltages V/sub br/ of 56 V. At 0.9 V/sub br/, the dark current is typically 10 nA for a 30-/spl mu/m-diameter active area device. The theoretical calculations of dark currents …
Authors
Ma CLF; Deen MJ; Tarof LE
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Publication Date
January 1, 1993
DOI
10.1109/ccece.1993.332488
Name of conference
Proceedings of Canadian Conference on Electrical and Computer Engineering