Conference
DC and Low-Frequency Noise Optimization of Four-Gate Transistors
Abstract
The effects of different parameters on the DC and low-frequency noise performance of four gate field effect transistors (G4-FET) are studied. Experimental data of the drain current and the current noise power spectral density (PSD) are compared with simulation results. The comparisons show that the drain current and its associated noise are very sensitive to the doping profile of the pn junctions that constitute the lateral gates of the device. …
Authors
Tejada JAJ; Rodríguez AL; Godoy A; Rodríguez-Bolívar S; Villanueva JA; Marinov O; Deen MJ
Volume
1
Pagination
pp. 1-4
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Publication Date
March 1, 2012
DOI
10.1109/iccdcs.2012.6188916
Name of conference
2012 8th International Caribbean Conference on Devices, Circuits and Systems (ICCDCS)