Conference
The dynamic threshold voltage MOSFET
Abstract
In this contribution, the development of the dynamic threshold voltage (DT) MOSFET is reviewed. The forward-biasing of the source-substrate junction was proposed for the first time in 1984 as part of an early strategy to improve the MOSFET performance when scaled. This led to the design of a quarter-micron technology, operating at 77 K, using a 0.6 V voltage supply and with the substrate connected to a fixed forward biasing potential. Ten years …
Authors
de la Hidalga-W. FJ; Deen MJ
Pagination
pp. d63/1-d63/7
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Publication Date
January 1, 2000
DOI
10.1109/iccdcs.2000.869845
Name of conference
Proceedings of the 2000 Third IEEE International Caracas Conference on Devices, Circuits and Systems (Cat. No.00TH8474)