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A Novel Gain Boosting Technique for Design of Low...
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A Novel Gain Boosting Technique for Design of Low Power Narrow-Band RFCMOS LNAs

Abstract

A novel gain boosting technique to increase the power gain of narrow-band RF low noise amplifiers is developed and verified. This technique is based on utilizing a negative resistance in the cascode configuration that is the most common configuration in designing LNAs. Using this technique, a LNA, called the negative resistance cascode LNA, was designed. The LNA operates at 7 GHz and consumes only 7.2 mW of power. It is shown that the negative …

Authors

Asgaran S; Deen MJ

Pagination

pp. 293-296

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Publication Date

January 1, 2004

DOI

10.1109/newcas.2004.1359089

Name of conference

The 2nd Annual IEEE Northeast Workshop on Circuits and Systems, 2004. NEWCAS 2004.