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Enhanced Photon Detection Probability Model for Single-Photon Avalanche Diodes in TCAD with Machine Learning

Abstract

Accurate photon detection probability (PDP) modeling is important for the optimized design of single-photon avalanche diodes (SPADs) using modern standard CMOS technologies. To ensure a planar active region of a SPAD, the edge of the depletion region must have a lower electric field, so a lower doping concentration is needed. However, this edge effect may have a negative impact on the total PDP, especially for small-sized SPADs. In this paper, …

Authors

Qian X; Jiang W; Deen MJ

Volume

00

Pagination

pp. 1-6

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Publication Date

June 4, 2022

DOI

10.1109/iemtronics55184.2022.9795802

Name of conference

2022 IEEE International IOT, Electronics and Mechatronics Conference (IEMTRONICS)