Carrier Localization at Atomic‐Scale Compositional Fluctuations in Single AlGaN Nanowires with Nano‐Cathodoluminescence

Considerable interest has been generated to develop highly efficient deep ultraviolet (DUV) emitters using AlGaN‐based alloys with direct bandgaps between 3.4 – 6.1 eV for a broad range of applications. Conventional planar AlGaN DUV devices, such as electrically injected solid‐state lasers and light‐emitting diodes, experience limited efficiencies due to the high dislocation density and inefficient p ‐doping with increasing Al‐content using Mg. …