Journal article
Dislocation Nucleation in MOCVD GaN Films on Stepped and Unstepped 4H-SiC Substrates
Authors
Twigg ME; Bassim N; Picard Y; Mastro M; Zega T; Caldwell JD; Henry R; Eddy C; Holm R; Neudeck P
Journal
ECS Meeting Abstracts, Vol. MA2007-02, No. 26, pp. 1349–1349
Publisher
The Electrochemical Society
Publication Date
September 28, 2007
DOI
10.1149/ma2007-02/26/1349
ISSN
2151-2043