Journal article
Chemical imaging of oxide confinement layers in GaAs/AlxGa1−xAs VCSELs
Abstract
The authors have studied the lateral oxidation of AlxGa1−xAs layers buried in vertical-cavity surface-emitting lasers using cross-sectional scanning transmission electron microscopy coupled with electron energy loss spectroscopy. Chemical maps and composition profiles of the oxidized AlO x layers have been produced. The sensitivity is such that trace compositions of a few % As and Ga can be detected in the AlO x with a spatial resolution of a …
Authors
Mokhtari M; Pagnod-Rossiaux P; Levallois C; Pofelski A; Laruelle F; Botton GA; Landesman J-P
Journal
Semiconductor Science and Technology, Vol. 37, No. 7,
Publisher
IOP Publishing
Publication Date
July 1, 2022
DOI
10.1088/1361-6641/ac7070
ISSN
0268-1242