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L-band directly modulated laser for 10G PONs
Conference

L-band directly modulated laser for 10G PONs

Abstract

Among a variety of techniques for broadband access, the infrastructure based on Passive Optical Network (PON) is one of the most viable solutions. In 10- and 40-Gigabit capable PON, the downstream wavelength in optical line terminals (OLTs) has been set in L-band. The electroabsorption modulated laser (EML) is a popular lasing source in such PONs due to its low chirp and high modulation speed. However, its complicated epi-growth technology of …

Authors

Liu J; Li J; Xi Y; Li X; Ke C; Wang Y; Fu Z

Pagination

pp. 2718-2718

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

DOI

10.1109/piers.2016.7735106

Name of conference

2016 Progress in Electromagnetic Research Symposium (PIERS)