Conference
Gated lateral bipolar transistors: characteristics, modeling and applications
Abstract
The technology, physics, electrical characteristics (particularly at low temperatures) and analog circuit applications of a new gated lateral pnp (LPNP) bipolar transistor, fabricated with a 0.8 /spl mu/m BiCMOS technology, are described. This gated LPNP transistor has five terminals-collector, base, emitter, gate and substrate. Because there are two inputs (gate and emitter for a common-base configuration, or gate and base for a common-emitter …
Authors
Deen MJ
Pagination
pp. 22-32
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Publication Date
January 1, 1998
DOI
10.1109/iccdcs.1998.705702
Name of conference
Proceedings of the 1998 Second IEEE International Caracas Conference on Devices, Circuits and Systems. ICCDCS 98. On the 70th Anniversary of the MOSFET and 50th of the BJT. (Cat. No.98TH8350)