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The use of constant-resistance DLTs to study...
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The use of constant-resistance DLTs to study proton radiation damages in CCD output MOSFETs

Authors

Kolev PV; Hardy T; Deen MJ; Murowinski R

Editors

RaiChoudhury P; Benton JL; Schroder DK; Shaffner TJ

Series

ELECTROCHEMICAL SOCIETY SERIES

Volume

97

Pagination

pp. 389-399

Publisher

ELECTROCHEMICAL SOCIETY INC

Publication Date

January 1, 1997

ISBN-10

1-56677-139-0

Name of conference

Diagnostic Techniques for Semiconductor Materials and Devices Symposium at the Electrochemical-Society Meeting

Conference place

MONTREAL, CANADA

Conference start date

May 6, 1997

Conference end date

May 8, 1997

Conference proceedings

PROCEEDINGS OF THE ELECTROCHEMICAL SOCIETY SYMPOSIUM ON DIAGNOSTIC TECHNIQUES FOR SEMICONDUCTOR MATERIALS AND DEVICES

Issue

12

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