Conference
Influence of the Contact Effects on the Variation of the Trapped Charge in the Intrinsic Channel of Organic Thin Film Transistors
Abstract
In this work, we propose a procedure to extract information of the trapping processes that occur in organic thin film transistors (OTFTs) during hysteresis mechanisms. The procedure is based on a compact model that describes the transistor as the combination of an intrinsic transistor and the contact regions. The model is used to extract output characteristics for the intrinsic transistor from experimental measurements. It eliminates the effect …
Authors
Awawdeh KM; Tejada JAJ; Varo PL; Villanueva JAL; Deen MJ
Volume
1
Pagination
pp. 71-74
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Publication Date
February 1, 2013
DOI
10.1109/cde.2013.6481345
Name of conference
2013 Spanish Conference on Electron Devices