Conference
Effects of Electrical Stress on the Frequency Performance of $0.18\,\mu{\rm m}$ Technology NMOSFETs
Abstract
The effects of DC hot-carrier stress on DC and RF performance of submicron LDD NMOSFETs are investigated. It is shown that transit frequency $f_{T}$ decreases as transconductance $g_{m}$ of the transistor is degraded with stress but it is observed that degradation of $f_{T}$ versus stress time is faster than that of $g_{m}$. This was found to be due to the increase of the gate-source capacitances $C_{gs}$ with stress. Threshold voltage $V_{th}$ …
Authors
Naseh S; Deen MJ; Marinov O
Pagination
pp. 119-123
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Publication Date
January 1, 2001
DOI
10.1109/icmts.2001.928649
Name of conference
ICMTS 2001. Proceedings of the 2001 International Conference on Microelectronic Test Structures (Cat. No.01CH37153)