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Stopping effect in growth kinetics of III-V...
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Stopping effect in growth kinetics of III-V nanowires

Abstract

We present a model for the growth kinetics of III-V nanowires which describes the time evolution of the monolayer coverage and group V concentration in the droplet. Special emphasis is put on the stopping effect at very low group V contents, where 2D island rapidly fills a fraction of monolayer and then grows much slower at the rate of the droplet refill from vapor. Such a regime has far-reaching implications in the periodically changing morphology of the growth interface, nucleation statistics, and size distributions within the ensembles of III-V nanowires.

Authors

Wilson DP; Glas F; LaPierre RR; Dubrovskii VG

Volume

00

Pagination

pp. 1-1

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Publication Date

November 6, 2020

DOI

10.1109/iclo48556.2020.9285606

Name of conference

2020 International Conference Laser Optics (ICLO)
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